Paper
1 April 2009 Improving the performance of light-sensitive developer-soluble anti-reflective coatings by using adamantyl terpolymers
Jim D. Meador, Joyce A. Lowes, Charlyn Stroud, Sherilyn Thomas, Yilin Qiu, Ramil-Marcelo L. Mercado, Victor Pham, Mark Slezak
Author Affiliations +
Abstract
In a search for improved resolution and processing latitude for a family of light-sensitive developer-soluble bottom antireflective coatings (BARCs), the structure of the binder terpolymer was altered by incorporating acid-cleavable adamantyl methacrylates. Contrast curves and 193-nm microlithography were then used as tools in developing a novel developer-soluble adamantyl BARC which does not include a photoacid generator (PAG) or quencher, but instead depends on acid diffusing from the exposed resist for development. This formulation eliminates concern about PAG or quencher leaching out of the BARC during application of the photoresist. Resolution for a resist A and the new BARC was 150-nm L/S (1:1) for both 38-nm and 54- to 55-nm BARC thicknesses. Resolution and line shape were comparable to that of the non-adamantyl control BARC with same resist at 55-nm BARC thickness, with both BARCs giving some undercutting using an AmphibianTM XIS interferometer for the 193-nm exposures. Light-sensitive adamantyl BARCs that do require inclusion of a PAG for optimum lithography with resist A are also described in this paper. The series of developer-soluble adamantyl BARCs were solution and spin-bowl compatible. The 193-nm optical parameters (n and k) for all adamantyl BARCs were 1.7 and 0.5-0.6, respectively.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jim D. Meador, Joyce A. Lowes, Charlyn Stroud, Sherilyn Thomas, Yilin Qiu, Ramil-Marcelo L. Mercado, Victor Pham, and Mark Slezak "Improving the performance of light-sensitive developer-soluble anti-reflective coatings by using adamantyl terpolymers", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727312 (1 April 2009); https://doi.org/10.1117/12.813783
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Cited by 4 scholarly publications.
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KEYWORDS
Lithography

Photoresist materials

Photoresist developing

Polymers

Scanning electron microscopy

Antireflective coatings

Interferometers

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