Paper
16 March 2009 C-quad polarized illumination for back end thin wire: moving beyond annular illumination regime
Sohan Singh Mehta, Hyung-Rae Lee, Bassem Hamieh, Chidam Kallingal, Itty Matthew, Ramya Viswanathan, Derren N. Dunn
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Abstract
The objective of this work is to describe the advances in the use of C-Quad polarized illumination for densest pitches in back end of line thin wire in 32m technology and outlook for 28 nm technology with NA of 1.35 on a 193nm wavelength scanner. Through simulation and experiments, we found that moving from Annular to C-Quad illumination provides improvement in intensity and contrast. We studied the patterning performance of C-Quad illumination for 1D dense, semi dense, isolated features with and without polarization. Polarization shows great improvement in contrast and line edge roughness for dense pattern. Patterning performance of isolated and semi-isolated features was the same with and without polarization.
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Sohan Singh Mehta, Hyung-Rae Lee, Bassem Hamieh, Chidam Kallingal, Itty Matthew, Ramya Viswanathan, and Derren N. Dunn "C-quad polarized illumination for back end thin wire: moving beyond annular illumination regime", Proc. SPIE 7274, Optical Microlithography XXII, 72742Y (16 March 2009); https://doi.org/10.1117/12.814296
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KEYWORDS
Polarization

Line edge roughness

Diffraction

Optical lithography

Semiconducting wafers

Critical dimension metrology

Fiber optic illuminators

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