Selective MOVPE of III-nitrides and device fabrication on an Si substrate

Nobuhiko Sawaki

doi:10.1117/12.822632

19 February 2009 Selective MOVPE of III-nitrides and device fabrication on an Si substrate

Nobuhiko Sawaki

Proceedings Volume 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration; 727902 (2009) https://doi.org/10.1117/12.822632
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China

Abstract

Growth of III-nitrides on silicon is investigated to realize optical devices on silicon substrate. The emphasis is focused on the growth of highly qualified GaN micro-crystals on patterned Si substrate so that we may achieve GaN-Si integration. Because of the differences in the crystal structure and the thermal expansion coefficient, the epitaxial layer is subject to defects/cracks, which are overcome by selective area growth (SAG) on patterned Si substrate. By using the anisotropy etching of the Si, we can make {111} facet of Si on the substrate surface. The SAG of the GaN is achieved on the thus prepared {111} facet. As a result, growth of non-polar or semi-polar GaN has been achieved in self-organizing manner. The growth of (1-101), (11-22) and (11-20)GaN are demonstrated on (001), (113) and (110) Si substrate, respectively. Fabrication of an optical waveguide and light emitting diode are demonstrated on Si substrate.

Citation Download Citation

Nobuhiko Sawaki "Selective MOVPE of III-nitrides and device fabrication on an Si substrate", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 727902 (19 February 2009); https://doi.org/10.1117/12.822632

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