Russian development of HgCdTe technology: 50 years

Konstantin O. Boltar; Igor D. Burlakov; Vladimir P. Ponomarenko; Anatoly M. Filachov

doi:10.1117/12.818425

7 May 2009 Russian development of HgCdTe technology: 50 years

Konstantin O. Boltar, Igor D. Burlakov, Vladimir P. Ponomarenko, Anatoly M. Filachov

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72982P (2009) https://doi.org/10.1117/12.818425
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

MCT was independently synthesized in Soviet Union one year later than in UK. MCT investigations and technology development virtually started from the material origin. Main milestones of this way from early days to the present are reviewed. Deep researches and MCT based device development spring from the projects which Scientific Research Institute of Applied Physics (now ORION Research and Production Association) charged with in 1969. Gradual material, photoresistor and photodiode technology developments were carried out in 1970-1990 and resulted in n-type single crystals MCT industrial production mastery, photoconductive detectors series up to 200 elements and high frequency heterodyne detectors production. New generation devices - focal plane arrays and MCT epitaxial technology were developed in 1980-2000. MCT FPA and heteroepitaxial technology enhancement since 2000 led to production of the family of long linear and staring second generation arrays in various formats and package configurations. Third generation devices pointed on advanced MCT heteroepitaxial technologies and new type photosensitive structures creation are under development. Original investigations of some interesting phenomena in MCT and device structures such as injection heat transfer and negative differential conductance in MCT diodes, metal-tunnel transparent insulator structures are also presented.

Citation Download Citation

Konstantin O. Boltar, Igor D. Burlakov, Vladimir P. Ponomarenko, and Anatoly M. Filachov "Russian development of HgCdTe technology: 50 years", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982P (7 May 2009); https://doi.org/10.1117/12.818425

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