Paper
17 June 2009 The combined influence of low-flux electrons irradiation and weak magnetic field on silicon microhardness
Yuriy I. Golovin, Alexander A. Dmitrievskiy, Nadezhda Yu. Efremova, Vladimir M. Vasyukov
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Abstract
The combined influence of low-flux electron irradiation and weak magnetic and electric fields on silicon single-crystal microhardness was investigated. It is shown that the microhardness is more sensitive to low-doses effects irradiation than conductivity. The effect of magnetic and electric fields on the process of secondary radiation defects generation was revealed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuriy I. Golovin, Alexander A. Dmitrievskiy, Nadezhda Yu. Efremova, and Vladimir M. Vasyukov "The combined influence of low-flux electrons irradiation and weak magnetic field on silicon microhardness", Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 73770M (17 June 2009); https://doi.org/10.1117/12.836914
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KEYWORDS
Silicon

Magnetism

Electrons

Crystals

Nanotechnology

Chemical species

Process control

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