Electrical and optical properties of Mn1.56Co0.96Ni0.48O4 films for infrared detection

Jing Wu; Zhi Ming Huang; Yuan Hou; Yan Qing Gao; Jun Hao Chu

doi:10.1117/12.833507

24 August 2009 Electrical and optical properties of Mn_1.56Co_0.96Ni_0.48O₄ films for infrared detection

Jing Wu, Zhi Ming Huang, Yuan Hou, Yan Qing Gao, Jun Hao Chu

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738115 (2009) https://doi.org/10.1117/12.833507
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Mn_1.56Co_0.96Ni_0.48O₄ films with spinel structure for infrared detection are prepared on Al2O₃ substrate by chemical solution deposition method. The resistance vs temperature (R-T) characteristics at 130~304 K temperature range and infrared transmission spectrum (1-10 μm) are measured and temperature coefficients of resistance (TCR) are calculated. The conduction process can be explained well by hopping conduction. At low temperature nearest neighbor hopping (NNH) mechanism fits the data well, while at high temperature, variable range hopping (VRH) mechanism dominates the system, and this transition temperature is at about 200 K. The value of TCR is about -3.73% K^-1 at 300 K. Mn_1.56Co_0.96Ni_0.48O₄ films exhibit a strong absorption around 2μm which is considered to be corresponding to the gap of energy bands showed by infrared transmission spectrum. The band gap obtained from the transmission spectrum data using the Tauc's law is ~0.567 eV.

Citation Download Citation

Jing Wu, Zhi Ming Huang, Yuan Hou, Yan Qing Gao, and Jun Hao Chu "Electrical and optical properties of Mn_1.56Co_0.96Ni_0.48O₄ films for infrared detection", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738115 (24 August 2009); https://doi.org/10.1117/12.833507

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