Paper
4 August 2009 Characterization of doped ZnCdTe crystals as THz emitters
Xiu-min Wang, Yu-lei Shi, Yu-ping Yang
Author Affiliations +
Abstract
Characterization of doped ZnCdTe crystals as terahertz (THz) emitters is studied in detail. By measuring the absorption of THz wave and analyzing the phase matching condition in these crystals, it is found that the dispersion property of crystals and the self-absorption of THz waves in these crystals play important roles in THz radiation. It is also found that the direct current (DC) resistivity of the crystal for THz emitter application should be greater than 106Ωcm. The THz generation efficiency increases as their DC resistivity increases, but the efficiency saturates and even declines when the resistivity goes beyond 106Ωcm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiu-min Wang, Yu-lei Shi, and Yu-ping Yang "Characterization of doped ZnCdTe crystals as THz emitters", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738507 (4 August 2009); https://doi.org/10.1117/12.835695
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Terahertz radiation

Crystals

Absorption

Doping

Crystallography

Phase matching

Refractive index

Back to Top