The influence of Si doping to the characteristics of AlGaAs / AlAs distributed Bragg reflectors

Chin-Hua Tu; Nien-Po Chen; Jin-Hsiang Liu

doi:10.1117/12.825596

18 August 2009 The influence of Si doping to the characteristics of AlGaAs / AlAs distributed Bragg reflectors

Chin-Hua Tu, Nien-Po Chen, Jin-Hsiang Liu

Proceedings Volume 7422, Ninth International Conference on Solid State Lighting; 742216 (2009) https://doi.org/10.1117/12.825596
Event: SPIE Optical Engineering + Applications, 2009, San Diego, California, United States

Abstract

Many researches have been devoted to enhance the light extraction of light emitting diodes (LED). In some designs of LEDs, an absorbing substrate cannot be avoided. To prevent the emitted light from being absorbed by the substrate, a highly reflective mirror called distributed Bragg reflectors (DBR) is employed between the substrate and the active layers. In addition, the DBR layers are doped to conduct current. In our study, we have n-GaAs as the substrate, n-AlGaAs / AlAs as the DBR, multiple quantum wells (MQW) as the active layers, p-GaP as the window layer. The choices of the dopant for the DBR are Si and Te. However, the resultant LEDs have different performance. The one doped with Si in DBR (DBR:Si) performs poorly. Our investigation shows that the optical properties of DBR:Si degrade dramatically because of the existence of AlGaInP (part of MQW) layer above and the subsequent high temperature annealing in p-GaP layer growth. Either condition alone cannot yield the degradation. Conversely, the optical properties of DBR:Te do not change significantly even though it undergoes the same processes to grow the subsequent layers. The result indicates a sophisticated interaction between DBR:Si and AlGaInP layers during the high temperature annealing process for the growth of p-GaP. The study provides the insight on the influence of the dopant to the optical properties of DBR in LED devices.

Citation Download Citation

Chin-Hua Tu, Nien-Po Chen, and Jin-Hsiang Liu "The influence of Si doping to the characteristics of AlGaAs / AlAs distributed Bragg reflectors", Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742216 (18 August 2009); https://doi.org/10.1117/12.825596

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Aluminium gallium indium phosphide

Annealing

Reflectivity

Light emitting diodes

Silicon

Optical properties

Crystals

Show All Keywords

Keywords/Phrases

Search In:

Publication Years