Sub-micron machining of semiconductors: femtosecond surface ripples on GaAs by 2 um laser light

Mark Ramme; Jiyeon Choi; Troy Anderson; Ilja Mingareev; Martin Richardson

doi:10.1117/12.843701

25 February 2010 Sub-micron machining of semiconductors: femtosecond surface ripples on GaAs by 2 μm laser light

Mark Ramme, Jiyeon Choi, Troy Anderson, Ilja Mingareev, Martin Richardson

Proceedings Volume 7590, Micromachining and Microfabrication Process Technology XV; 759004 (2010) https://doi.org/10.1117/12.843701
Event: SPIE MOEMS-MEMS, 2010, San Francisco, California, United States

Abstract

In recent years, a major interest in surface as well as bulk property modification of semiconductors using laser irradiation has developed. A.Kar et al. [1][2] and E.Mazur et al. [3] have shown introduction and control of dopants by long-pulse laser irradiation and increased absorption due to femtosecond irradiation respectively. With the development of mid-IR sources, a new avenue of irradiation can be established in a spectral region where the semiconductor material is highly transparent to the laser radiation. The characterization of the light-matter-interaction in this regime is of major interest. We will present a study on GaAs and its property changes due to pulsed laser irradiation ranging from the visible to the mid-IR region of the spectrum. Long-pulse as well as ultra-short pulse radiation is used to modify the material. Parameters such as ablation threshold, radiation penetration depth and thermal diffusion will be discussed.

Citation Download Citation

Mark Ramme, Jiyeon Choi, Troy Anderson, Ilja Mingareev, and Martin Richardson "Sub-micron machining of semiconductors: femtosecond surface ripples on GaAs by 2 μm laser light", Proc. SPIE 7590, Micromachining and Microfabrication Process Technology XV, 759004 (25 February 2010); https://doi.org/10.1117/12.843701

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