The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers

S. W. Chen; T. T. Kao; T. T. Wu; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1117/12.840487

10 March 2010 The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers

S. W. Chen, T. T. Kao, T. T. Wu, T. C. Lu, H. C. Kuo, S. C. Wang

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760215 (2010) https://doi.org/10.1117/12.840487
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

GaN-based photonic crystal surface-emitting lasers(PCSELs) with AlN/GaN distributed Bragg reflectors were fabricated and analyzed. Different lasing characteristics of GaN-based PCSEL has been determeined and demonstrated by the PC lattice constants. The laser emission behavior covered the whole PC patterns of 50 μm in diameter. Under the optical pumping at room temperature, the PCSEL with PC lattice constant of 230nm shows a threshold energy density of about 2.7 mJ/cm². Above the threshold, one dominated peak emits at 420.11 nm with a linewidth of 1.1 Å. The lasing wavelength emitted from PC lasers with different lattice constants occurs at the calculated band-edges provided by the PC patterns which further shows different polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ, K, and M directions in the K-space. The PCSEL also shows a characteristic temperature of 148K and a spontaneous emission coupling efficiency β of about 5x10^-3. Besides, the coupled-wave model in the PC hexagonal-lattice is applied to distinguish the discrepancy in threshold power and the corresponding coupling coefficient. The results show the lasing actions within Γ, K, and M modes have the substantial relation between the threshold energy density and the coupling coefficient.

Citation Download Citation

S. W. Chen, T. T. Kao, T. T. Wu, T. C. Lu, H. C. Kuo, and S. C. Wang "The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760215 (10 March 2010); https://doi.org/10.1117/12.840487

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