Functionalization of multiferroic oxide structures for spintronic devices

C.-L. Jia; J. Berakdar

doi:10.1117/12.845582

15 February 2010 Functionalization of multiferroic oxide structures for spintronic devices

C.-L. Jia, J. Berakdar

Proceedings Volume 7603, Oxide-based Materials and Devices; 76030O (2010) https://doi.org/10.1117/12.845582
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We study the electronic and magneto-transport properties of multiferroic oxide-based structures and explore their potential for spintronic applications. In particular, we point out the possibility of using the two dimensional electron gas (2DEG) formed at the interface of helimagnetic oxides as a spin-field-effect transistor and a flash memory device. The operation of this device relies on the fact that the topology of the multiferroic oxide local magnetic moments results in a resonant momentum-dependent effective spin-orbit interaction acting on 2DEG. The spin polarization dephasing is strongly suppressed which is crucial for functionality. The effective spin-orbit interaction and the carrier spin precession phase depend linearly on the magnetic spiral helicity which, due to the magnetoelectric coupling, is electrically controllable. We also consider helical multiferroic tunnel junctions with a normal metallic layer as the bottom electrode and a ferromagnetic layer as the other electrode. It is shown that the tunnel-magneto-resistance is spatially dependent and is controllable via an external electric field.

Citation Download Citation

C.-L. Jia and J. Berakdar "Functionalization of multiferroic oxide structures for spintronic devices", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030O (15 February 2010); https://doi.org/10.1117/12.845582

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