Flare modeling and calculation on EUV optics

M. Shiraishi; T. Oshino; K. Murakami; H. Chiba

doi:10.1117/12.846472

22 March 2010 Flare modeling and calculation on EUV optics

M. Shiraishi, T. Oshino, K. Murakami, H. Chiba

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 763629 (2010) https://doi.org/10.1117/12.846472
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Flare is a critical impact on extreme ultraviolet (EUV) lithography. Flare can be calculated by integrating flare point spread function (PSF) within the bright field. Flare PSF is defined as (1-TIS)δ(r)+PSF^SC(r); where TIS, total integrated scatter, is traditonally defined as integration of PSFSC to infinity, and r is distance on wafer. PSF^SC is traditionally derived from power spectral density (PSD) of surface roughness of mirrors of optics. However, the amount of scatter light depends on mirror PSDs, while a portion of scatter light having a larger scatter angle cannot reach wafer; this means there is energy loss in optics. Hence TIS should be defined as total amount of as-scattered light, while PSF^SC should be defined as amount of light reaching wafer for use to calculate image intensity. We then introduced two PSFs: PSF^SC and PSF^SC0. PSF^SC0 is directly derived from mirror PSDs and used to calculate TIS. PSF^SC is derived based on amount of light reaching wafer taking obscuration inside optics into account. We also applied other considerations: release of approximation in domain conversion from PSD to PSF, and scatter extinct effect by multilayer. Using these considerations we can calculate flare behaviors which agree well with experiments.

Citation Download Citation

M. Shiraishi, T. Oshino, K. Murakami, and H. Chiba "Flare modeling and calculation on EUV optics", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763629 (22 March 2010); https://doi.org/10.1117/12.846472

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