Paper
22 March 2010 Comparison of OPC models with and without 3D-mask effect
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Abstract
OPC models with and without thick mask effect (3D-mask effect) are compared in their prediction capabilities of actual 2D patterns. We give some examples in which thin-mask models fail to compensate the 3D-mask effect. The models without 3D-mask effect show good model residual error, but fail to predict some critical CD tendencies. Rigorous simulation predicts the observed CD tendencies, which confirms that the discrepancy really comes from 3D-mask effect.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung-Hoon Ser, Tae-Hoon Park, Moon-Gyu Jeong, Eun-Mi Lee, Sung-Woo Lee, Chun-Suk Suh, Seong-Woon Choi, Chan-Hoon Park, and Joo-Tae Moon "Comparison of OPC models with and without 3D-mask effect", Proc. SPIE 7640, Optical Microlithography XXIII, 76401T (22 March 2010); https://doi.org/10.1117/12.848317
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Cited by 1 scholarly publication.
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KEYWORDS
3D modeling

Optical proximity correction

Photomasks

Cadmium

Semiconducting wafers

Scanning electron microscopy

Electronics

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