Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Z. Chobola; M. Lunak; J. Vanek; E. Hulicius

doi:10.1117/12.854891

27 April 2010 Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Z. Chobola, M. Lunak, J. Vanek, E. Hulicius

Proceedings Volume 7720, Semiconductor Lasers and Laser Dynamics IV; 77202C (2010) https://doi.org/10.1117/12.854891
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

A non-destructive method of reliability prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Citation Download Citation

Z. Chobola, M. Lunak, J. Vanek, and E. Hulicius "Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77202C (27 April 2010); https://doi.org/10.1117/12.854891

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