Paper
22 September 2010 Fluorescence study of silicon fabricated by nanosecond pulse laser
Chunyang Liu, Lidong Sun, Yulan Lu, Xing Fu, Fengming Sun, Peter Zeppenfeld
Author Affiliations +
Proceedings Volume 7750, Photonics North 2010; 77501A (2010) https://doi.org/10.1117/12.871375
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
Some ~20μm wide slots have been fabricated on Si (100) using a homebuilt 355nm nanosecond pulse laser micromachining system. The slots were characterized by fluorescence microscopy, local spectroscopy and scanning electron microscopy. A kind of microstructure like porous silicon was formed in the fabrication zone. Strong photoluminescence emission from the fabricated zone in the wavelength range between 450nm and 700nm has been detected. Furthermore, a strong decay of the PL intensity has been observed as a function of irradiation time for excitation with wavelength between 400nm and 440nm. The analysis of elemental composition in the fabrication zone shows that the fluorescence emission is in relationship with Oxygen distribution and the modified structure.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chunyang Liu, Lidong Sun, Yulan Lu, Xing Fu, Fengming Sun, and Peter Zeppenfeld "Fluorescence study of silicon fabricated by nanosecond pulse laser", Proc. SPIE 7750, Photonics North 2010, 77501A (22 September 2010); https://doi.org/10.1117/12.871375
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KEYWORDS
Silicon

Luminescence

Pulsed laser operation

Semiconductor lasers

Scanning electron microscopy

Micromachining

Nanolithography

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