Investigation on solid state Nd[sup]3+[/sup]:YAG line beam laser annealing and texturing of amorphous silicon thin films

N. J. Vasa; A. I. Palani; M. Singaperumal

doi:10.1117/12.874844

21 February 2011 Investigation on solid state Nd³⁺:YAG line beam laser annealing and texturing of amorphous silicon thin films

N. J. Vasa, A. I. Palani, M. Singaperumal

Author Affiliations +

Proceedings Volume 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI; 79200M (2011) https://doi.org/10.1117/12.874844
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Fabrication of textured poly-crystalline silicon films from amorphous-silicon (a-Si) films using a line beam is investigated. The mechanism of laser annealing and simultaneously form a nano-textured surface using an Nd³⁺: YAG laser at a wavelength of 355 nm with a line beam is discussed. Amorphous-Si films coated on glass and crystalline silicon substrates were treated with different laser fluence from 100 to 600 mJ/cm² and with 90% beam overlap. The crystallization and texturization characteristics were analyzed through SEM, Raman Spectroscopy, AFM, resistance and absorbance measurements. Generation of polycrystalline textured peaks was confirmed with different characterization methods and compared with the results of the conventional circular beam. This approach of line beam with increase in the scanning speed will allow the faster production of polycrystalline silicon from a-Si for photovoltaic application.

Citation Download Citation

N. J. Vasa, A. I. Palani, and M. Singaperumal "Investigation on solid state Nd³⁺:YAG line beam laser annealing and texturing of amorphous silicon thin films", Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79200M (21 February 2011); https://doi.org/10.1117/12.874844

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