Low Temperature Photoluminescence Signature Of A Two-Dimensional Electron Gas

Emil S. Koteles; J. Y. Chi; R. P. Holmstrom

doi:10.1117/12.940893

22 April 1987 Low Temperature Photoluminescence Signature Of A Two-Dimensional Electron Gas

Emil S. Koteles, J. Y. Chi, R. P. Holmstrom

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940893
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We report the first observation of a narrow, low temperature photoluminescence peak associated with the presence of a two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface. The exact physical mechanism giving rise to this emission is not clear. However, based on a large number of samples, its intensity is found to be directly related with the concentration of the electron gas. The temperature and exciting-intensity dependencies of the peak are consistent with a model based on free excitons in GaAs bound to the electron quantum well formed at the heterointerface by the 2DEG.

Citation Download Citation

Emil S. Koteles, J. Y. Chi, and R. P. Holmstrom "Low Temperature Photoluminescence Signature Of A Two-Dimensional Electron Gas", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940893

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