Laser-assisted nanoprocessing and growth of semiconductor nanostructures

David J. Hwang; Sang-Gil Ryu; Eunpa Kim; Jae-Hyuck Yoo; Bin Xiang; Oscar Dubon; Andrew M. Minor; Costas P. Grigoropoulos

doi:10.1117/12.882809

13 May 2011 Laser-assisted nanoprocessing and growth of semiconductor nanostructures

David J. Hwang, Sang-Gil Ryu, Eunpa Kim, Jae-Hyuck Yoo, Bin Xiang, Oscar Dubon, Andrew M. Minor, Costas P. Grigoropoulos

Author Affiliations +

Proceedings Volume 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III; 803106 (2011) https://doi.org/10.1117/12.882809
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Recent research results are presented where lasers of different pulse durations and wavelengths have been coupled to near-field-scanning optical microscopes (NSOMs) through apertured bent cantilever fiber probes and atomic force microscope (AFM) tips in apertureless configurations. Experiments have been conducted on the surface modification of metals and semiconductor materials. By combining nanoscale ablative material removal with subsequent chemical etching steps, ablation nanolithography and patterning of fused silica and crystalline silicon wafers has been demonstrated. Confinement of laser-induced crystallization to nanometric scales has also been shown. In-situ observation of the nanoscale materials modification was conducted by coupling the NSOM tips with a scanning electron microscope (SEM). Nucleation and growth of semiconductor materials have been achieved by laser chemical vapor deposition (LCVD) at the nanoscale level. Locally selective growth of crystalline silicon nanowires with controlled size, heterogeneity and nanometric placement accuracy has been accomplished.

Citation Download Citation

David J. Hwang, Sang-Gil Ryu, Eunpa Kim, Jae-Hyuck Yoo, Bin Xiang, Oscar Dubon, Andrew M. Minor, and Costas P. Grigoropoulos "Laser-assisted nanoprocessing and growth of semiconductor nanostructures", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 803106 (13 May 2011); https://doi.org/10.1117/12.882809

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