Paper
27 May 2011 Spectral polarimetry-based measurement of the thickness of a thin film
P. Hlubina, J. Luňáček, D. Ciprian
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Abstract
A simple polarimetry configuration is used for measuring the thickness of a nonabsorbing thin film on an absorbing substrate from the ratio between the spectral reflectances of p- and s-polarized components reflected from the thin-film structure. The spectral reflectance ratio measured at a fixed angle of incidence is fitted to the theoretical one to obtain the thin-film thickness provided that the optical constants of the thin-film structure are known. This procedure is used for measuring different thicknesses of a SiO2 thin film on a Si substrate. Moreover, an approximate linear relation between the thin-film thickness and a wavelength of the maximum of the reflectance ratio for a specific angle of incidence is revealed when the substrate is weakly absorbing. The application of this method is once again demonstrated in determining the thicknesses of the SiO2 thin films. The results of the techniques are compared with those obtained by a technique of spectral reflectometry, and a very good agreement is confirmed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Hlubina, J. Luňáček, and D. Ciprian "Spectral polarimetry-based measurement of the thickness of a thin film", Proc. SPIE 8082, Optical Measurement Systems for Industrial Inspection VII, 80822T (27 May 2011); https://doi.org/10.1117/12.889417
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KEYWORDS
Thin films

Reflectivity

Silica

Silicon

Polarimetry

Refractive index

Reflection

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