Generation of pure spin currents in a single electron transistor with a superconducting island

Marius V. Costache; Sergio O. Valenzuela

doi:10.1117/12.890231

15 September 2011 Generation of pure spin currents in a single electron transistor with a superconducting island

Marius V. Costache, Sergio O. Valenzuela

Proceedings Volume 8100, Spintronics IV; 81000I (2011) https://doi.org/10.1117/12.890231
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

We describe a spin filter at the single-electron level that produces pure spin currents with no net bias. Our device is based on the ground-state energetics of a single-electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. The current has opposite spin polarization when the current is reversed, which leads to a dc spin current when applying an alternating charge current with zero mean, as expected in a spin ratchet. We demonstrate spin transport and quantify the spin ratchet efficiency by means of ferromagnetic leads with known spin polarization.

Citation Download Citation

Marius V. Costache and Sergio O. Valenzuela "Generation of pure spin currents in a single electron transistor with a superconducting island", Proc. SPIE 8100, Spintronics IV, 81000I (15 September 2011); https://doi.org/10.1117/12.890231

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