Dry etching technologies for the advanced binary film

Yoshinori Iino; Makoto Karyu; Hirotsugu Ita; Tomoaki Yoshimori; Hidehito Azumano; Makoto Muto; Mikio Nonaka

doi:10.1117/12.898976

13 October 2011 Dry etching technologies for the advanced binary film

Yoshinori Iino, Makoto Karyu, Hirotsugu Ita, Tomoaki Yoshimori, Hidehito Azumano, Makoto Muto, Mikio Nonaka

Proceedings Volume 8166, Photomask Technology 2011; 81663W (2011) https://doi.org/10.1117/12.898976
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Citation Download Citation

Yoshinori Iino, Makoto Karyu, Hirotsugu Ita, Tomoaki Yoshimori, Hidehito Azumano, Makoto Muto, and Mikio Nonaka "Dry etching technologies for the advanced binary film", Proc. SPIE 8166, Photomask Technology 2011, 81663W (13 October 2011); https://doi.org/10.1117/12.898976

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