Research on anti-radiation semiconductor lasers in space

Hao-yuan Liu

doi:10.1117/12.900673

19 August 2011 Research on anti-radiation semiconductor lasers in space

Hao-yuan Liu

Proceedings Volume 8192, International Symposium on Photoelectronic Detection and Imaging 2011: Laser Sensing and Imaging; and Biological and Medical Applications of Photonics Sensing and Imaging; 81922H (2011) https://doi.org/10.1117/12.900673
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

With the development of electronic device widely used in space and radiation environment, internationally, they are paying more attention to the research of electronic components resist radiation properties. In order to improve properties of anti-radiation semiconductor lasers, satisfy variable needs in space applications, this paper introduces the space radiation environment, and its influence on the semiconductor lasers, analysis generating mechanism which is including total dose effect of radiation, SEU(Single Event Upset) and discomposition and so on. And through adopt to the way of Super EBD(Electronic Brakeforce Distribution), coating Y₂O₃-ZrO₂ film on the semiconductor lasers cavity surface to prove the ability of semiconductor lasers space resist radiation, use γray irradiation, analysis important indicator of laser like output power of coating film before and after, current power curve and so on.

Citation Download Citation

Hao-yuan Liu "Research on anti-radiation semiconductor lasers in space", Proc. SPIE 8192, International Symposium on Photoelectronic Detection and Imaging 2011: Laser Sensing and Imaging; and Biological and Medical Applications of Photonics Sensing and Imaging, 81922H (19 August 2011); https://doi.org/10.1117/12.900673

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