XPS study of InP/InGaAs/InGaAsP microstructures irradiated with ArF laser in air and deionized water

Neng Liu; Khalid Moumanis; Sonia Blais; Jan J. Dubowski

doi:10.1117/12.913082

28 February 2012 XPS study of InP/InGaAs/InGaAsP microstructures irradiated with ArF laser in air and deionized water

Neng Liu, Khalid Moumanis, Sonia Blais, Jan J. Dubowski

Proceedings Volume 8245, Synthesis and Photonics of Nanoscale Materials IX; 82450E (2012) https://doi.org/10.1117/12.913082
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

Excimer lasers, due to their compatibility with a large-scale industrial production, are attractive tools for precise processing of photonic and microelectronic materials. In this article, we discuss the effect of ArF excimer laser defect formation on the surface of InP/InGaAs/InGaAsP quantum well (QW) microstructures irradiated in air and deionized (DI) water environments. Structural defects on surfaces of such QW materials have been known to induce vacancy diffusion towards the QW region and lead to the so called quantum well intermixing (QWI) effect during the rapid thermal annealing step. Excimer lasers have been used to create surface defects on InP/InGaAs/InGaAsP microstructure and induce QWI during high temperature annealing. Chemical composition of the QW microstructures irradiated with ArF laser in air and DI water is studied with X-ray photoelectron spectroscopy to investigate both the formation and role of the surface defects in the laser-induced QWI process.

Citation Download Citation

Neng Liu, Khalid Moumanis, Sonia Blais, and Jan J. Dubowski "XPS study of InP/InGaAs/InGaAsP microstructures irradiated with ArF laser in air and deionized water", Proc. SPIE 8245, Synthesis and Photonics of Nanoscale Materials IX, 82450E (28 February 2012); https://doi.org/10.1117/12.913082

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