N-I-P-I Superlattices For Electro-Optical Applications

P.Paul Ruden

doi:10.1117/12.941987

19 February 1988 N-I-P-I Superlattices For Electro-Optical Applications

P.Paul Ruden

Proceedings Volume 0825, Spatial Light Modulators and Applications II; (1988) https://doi.org/10.1117/12.941987
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

The electro-optical properties of n-i-p-i doping superlattices are very promising for device applications, Two distinct approaches towards modulating the absorption and the refraction by applying external voltages are identified, and calculated results for GaAs n-p superlattices are presented. The first method uses the injection and extraction of non-equilibrium charge carriers into the superlattice via selective contacts to the n- and p-type layers. The second approach makes use of the possibility to apply a uniform external electric field parallel to the growth direction via sandwich electrodes. It is shown that the two schemes differ substantially in their dynamic response.

Citation Download Citation

P.Paul Ruden "N-I-P-I Superlattices For Electro-Optical Applications", Proc. SPIE 0825, Spatial Light Modulators and Applications II, (19 February 1988); https://doi.org/10.1117/12.941987

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