Paper
2 February 2012 Emcore's 1 Gb/s to 25 Gb/s VCSELs
Neinyi Li, Chuan Xie, Wenlin Luo, Chris J. Helms, Li Wang, Chiyu Liu, Qi Sun, Shenghong Huang, Chun Lei, K. P. Jackson, Rich F. Carson
Author Affiliations +
Abstract
Emcore's 850 nm UltralaseTM VCSELs, operating at a data rate from 1 Gb/s to 25 Gb/s, is presented. They were based on our low-cost and hermetic-by-design chip platform which contains the same element for either singlets or arrays with a 250 μm pitch. First, we discuss high-speed VCSEL evolutions, device designs, manufacturing processes, and device characteristics. Secondly, we present performance of Emcore's TOSAs, 40 Gb/s parallel optic modules (S12), 120 Gb/s CXP modules, active connect cables (40 Gb/s QDR and 56 Gb/s FDR), as well as comprehensive reliability qualifications of UltralaseTM VCSELs. Lastly, we briefly go over the recent progress of 20 Gb/s and 25 Gb/s VCSEL developments. We have successfully achieved a 3dB bandwidth of 15 GHz at 85°C and 8 mA for a 7.5 μm aperture UltralaseTM VCSEL.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Neinyi Li, Chuan Xie, Wenlin Luo, Chris J. Helms, Li Wang, Chiyu Liu, Qi Sun, Shenghong Huang, Chun Lei, K. P. Jackson, and Rich F. Carson "Emcore's 1 Gb/s to 25 Gb/s VCSELs", Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 827603 (2 February 2012); https://doi.org/10.1117/12.912507
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Cited by 14 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Semiconducting wafers

Quantum wells

Reliability

Eye

Gallium arsenide

Indium gallium arsenide

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