Engineering of AlGaN-Delta-GaN quantum wells gain media for mid- and deep-ultraviolet lasers

Jing Zhang; Hongping Zhao; Nelson Tansu

doi:10.1117/12.909165

14 February 2012 Engineering of AlGaN-Delta-GaN quantum wells gain media for mid- and deep-ultraviolet lasers

Jing Zhang, Hongping Zhao, Nelson Tansu

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82770J (2012) https://doi.org/10.1117/12.909165
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The gain characteristics of AlGaN-delta-GaN QWs active region with varying delta-GaN positions and AlGaN compositions are analyzed. From our finding, the use of AlGaN-delta-GaN QW resulted in ~ 7-times increase in material gain, in comparison to that of conventional AlGaN QW, for gain media emitting at 240 nm. By employing asymmetric QW design, with optimized GaN delta layer position and asymmetric AlGaN composition layers, the optimized optical gain can be achievable for AlGaN-delta-GaN QW structure with realistic design applicable for deep and mid UV lasers.

Citation Download Citation

Jing Zhang, Hongping Zhao, and Nelson Tansu "Engineering of AlGaN-Delta-GaN quantum wells gain media for mid- and deep-ultraviolet lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770J (14 February 2012); https://doi.org/10.1117/12.909165

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