GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. J. Chang

doi:10.1117/12.913294

6 February 2012 GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. J. Chang

Proceedings Volume 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI; 82781E (2012) https://doi.org/10.1117/12.913294
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The authors report the formation of air-voids at GaN/cone-shaped-patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H₃PO₄ and H₂SO₄ solution at 220°C for 5 and 20 min, respectively.

Citation Download Citation

S. J. Chang "GaN-based LEDs with air voids prepared by laser scribing and chemical etching", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82781E (6 February 2012); https://doi.org/10.1117/12.913294

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