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In this work, n+pn-type photodiodes with various surface n+ layer profiles formed on the atomically flat Si surface were
evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a
high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight
wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at
Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity
and a high stability to UV-light is proposed.
Taiki Nakazawa,Rihito Kuroda,Yasumasa Koda, andShigetoshi Sugawa
"Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light", Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980M (15 February 2012); https://doi.org/10.1117/12.907727
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Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, Shigetoshi Sugawa, "Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light," Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980M (15 February 2012); https://doi.org/10.1117/12.907727