Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light

Taiki Nakazawa; Rihito Kuroda; Yasumasa Koda; Shigetoshi Sugawa

doi:10.1117/12.907727

15 February 2012 Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light

Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, Shigetoshi Sugawa

Author Affiliations +

Proceedings Volume 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII; 82980M (2012) https://doi.org/10.1117/12.907727
Event: IS&T/SPIE Electronic Imaging, 2012, Burlingame, California, United States

Abstract

In this work, n⁺pn-type photodiodes with various surface n⁺ layer profiles formed on the atomically flat Si surface were evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at Si/SiO₂ system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity and a high stability to UV-light is proposed.

Citation Download Citation

Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, and Shigetoshi Sugawa "Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light", Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980M (15 February 2012); https://doi.org/10.1117/12.907727

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