Contact edge roughness and CD uniformity in EUV: effect of photo acid generator and sensitizer

Vijaya-Kumar Murugesan Kuppuswamy; Vassilios Constantoudis; Evangelos Gogolides; Alessandro Vaglio Pret; Roel Gronheid

doi:10.1117/12.918033

20 March 2012 Contact edge roughness and CD uniformity in EUV: effect of photo acid generator and sensitizer

Vijaya-Kumar Murugesan Kuppuswamy, Vassilios Constantoudis, Evangelos Gogolides, Alessandro Vaglio Pret, Roel Gronheid

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 832207 (2012) https://doi.org/10.1117/12.918033
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

One of the main challenges for developing EUV resists is to satisfy sidewall roughness to allowable limit. With concern of this challenge, in this paper we study the effects of PAG and sensitizer concentration on the CD variation and roughness of contact holes in a EUV resist for a range of exposure doses by applying an advanced characterization methodology. It is found that the contact edge roughness(CER) parameters(RMS,ξ) merge when they are plotted versus the final CD value revealing the critical role of contact CD in the dependence of CER on PAG and sensitizer. This finding means that for specific target CD, different PAG and sensitizer concentrations modify only slightly contact edge roughness parameters. Power spectrum analysis reveals the importance of low frequency edge undulations in RMS dependence on CD. In addition, we found that CD Variation increase with sensitizer concentration.

Citation Download Citation

Vijaya-Kumar Murugesan Kuppuswamy, Vassilios Constantoudis, Evangelos Gogolides, Alessandro Vaglio Pret, and Roel Gronheid "Contact edge roughness and CD uniformity in EUV: effect of photo acid generator and sensitizer", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832207 (20 March 2012); https://doi.org/10.1117/12.918033

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