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We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which
simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions
are vertical to the waveguide's propagation direction and tolerant with ± 150nm junction misalignment on the cost of
little degradation on the modulation efficiency. The device was fabricated with standard 0.18μm CMOS process, and
provides a VπLπ < 1V • cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the
device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally
demonstrated.
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