Very long wavelength infrared detection with p-on-n LPE HgCdTe

N. Baier; L. Mollard; O. Gravrand; G. Bourgeois; J.-P. Zanatta; G. Destefanis; P. Pidancier; P. Chorier; L. Tauziède; A. Bardoux

doi:10.1117/12.921855

31 May 2012 Very long wavelength infrared detection with p-on-n LPE HgCdTe

N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatta, G. Destefanis, P. Pidancier, P. Chorier, L. Tauziède, A. Bardoux

Author Affiliations +

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 83532N (2012) https://doi.org/10.1117/12.921855
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Developments made last years at CEA-LETI on p-on-n planar HgCdTe (MCT) photodiodes technology on long-, midand short-wavelength led to the manufacture of focal plane arrays (FPA) demonstrators with high performances. This technology has been successfully transferred to SOFRADIR for industrial production. Improvements have been done on both technology and process to index very long-wavelength spectral band. MCT base layer has been grown by liquid phase epitaxy (LPE) on lattice matched CdZnTe. The n-type doping is achieved during epitaxy by Indium incorporation, as In is naturally active as a donor in MCT. Planar p-on-n photodiodes were manufactured by Arsenic doping. As incorporation is achieved by ion-implantation and activation is done by post-implantation annealing under Hg overpressure. Multiples process settings were tested to find optimized conditions in order to obtain the best detector performances. Cutoff wavelength increase from LWIR at 9.2 μm at 77K was done in two steps, by adjusting technology process to get firstly 12.3 μm cutoff and then 15 μm at 77K. The second step was funded by french National Space Studies Center (CNES) to evaluate p-on-n IRFPAs performances for very long-wavelength detection for space applications such as IASI-NG. Electro-optical characterizations were performed both on test arrays and FPAs. Results show excellent operabilities (over 99.9% with ±0.5×mean value criterion) in responsivity and NETD, and current shot noise limited photodetectors. R₀A figure of merit is very high and at the state of the art.

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N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatta, G. Destefanis, P. Pidancier, P. Chorier, L. Tauziède, and A. Bardoux "Very long wavelength infrared detection with p-on-n LPE HgCdTe", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83532N (31 May 2012); https://doi.org/10.1117/12.921855

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