Paper
11 May 2012 A diode-based bolometer implemented on micromachined CMOS technology for terahertz radiation detection
Matteo Perenzoni, Suzana Domingues
Author Affiliations +
Abstract
In this work an antenna-coupled diode-based microbolometer implemented in a 0.35μm CMOS technology with a low-cost maskless micromachining post-process is proposed. The device is suspended above the substrate on an oxide membrane by removing the silicon underneath. It is composed of an antenna connected to a matched load, which heats up proportionally to the captured electromagnetic radiation, and heat sensing elements. These elements consist of several series polysilicon diodes placed near the antenna load, while an identical set of diodes is also included as a reference to track ambient temperature variations. Theoretical calculations and preliminary temperature characterization of polysilicon diodes have been performed. Different antenna sizes have been used so as to obtain detectors for 0.5THz, 1.0THz, and 2.0THz frequency operation. Thanks to the use of a standard CMOS technology, in the same chip a custom designed readout circuit has been integrated with the objective to maximize the performance of the detectors through signal amplification and filtering.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matteo Perenzoni and Suzana Domingues "A diode-based bolometer implemented on micromachined CMOS technology for terahertz radiation detection", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311T (11 May 2012); https://doi.org/10.1117/12.922440
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Diodes

Sensors

Antennas

Bolometers

CMOS technology

CMOS sensors

Signal detection

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