Paper
24 October 2012 Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors
F. Hartmann, F. Langer, D. Bisping, A. Musterer, S. Höfling, M. Kamp, A. Forchel, L. Worschech
Author Affiliations +
Abstract
AlGaAs/GaAs/AlGaAs double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched GaInNAs absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the tunnel AlGaAs barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 µm wavelength leads to a pronounced photo-effect with a sensitivity of around 1000 A/W.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Hartmann, F. Langer, D. Bisping, A. Musterer, S. Höfling, M. Kamp, A. Forchel, and L. Worschech "Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors", Proc. SPIE 8511, Infrared Remote Sensing and Instrumentation XX, 85110G (24 October 2012); https://doi.org/10.1117/12.931118
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KEYWORDS
Gallium arsenide

Absorption

Diodes

Sensors

Applied physics

Avalanche photodetectors

Gold

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