Hg(1-x)CdxSe Material Research for IR Applications

K. Doyle; G. Brill; Y. Chen; T. H. Myers; C. H. Swartz

doi:10.1117/12.953569

1 July 2013 Hg_(1-x)Cd_xSe Material Research for IR Applications

K. Doyle, G. Brill, Y. Chen, T. H. Myers, C. H. Swartz

Proceedings Volume 8512, Infrared Sensors, Devices, and Applications II; 851208 (2013) https://doi.org/10.1117/12.953569
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

HgCdTe (the current infrared material of choice) lacks a scalable, sufficiently lattice-matched substrate suitable for long wave infrared focal plane array production. One possible alternative material is HgCdSe. Similar to HgCdTe, HgCdSe is a ternary alloy which can be tuned across the infrared spectrum. Unlike HgCdTe, HgCdSe is nearly lattice matched to the scalable (and commercially available) substrate GaSb. Thus long wave infrared focal plane arrays could potentially be fabricated from HgCdSe grown on GaSb, with a ZnTeSe or CdTeSe buffer layer added to alleviate the slight mismatch. Samples of HgCdSe were grown via molecular beam epitaxy using a Se thermal cracker source to compare to those grown using a simple Se valved source. This allowed us to study any differences between layers grown with predominantly Se₂ flux versus Se₆ flux. Optimal growth parameters were explored using this new effusion source for Se. All HgCdSe samples grown with the simple valved source were heavily n-type (n~1017 cm^-3) despite being nominally undoped. However, when the valved Se effusion cell was replaced with the Se cracker source, the electron concentration was reduced and began to show significant temperature dependence below 100K. Subsequent experiments suggested this may be more related to different purity in the source material between the sources than the cracking process itself. Annealing under Hg raised the electron concentration, while annealing under Se lowered the concentration.

Citation Download Citation

K. Doyle, G. Brill, Y. Chen, T. H. Myers, and C. H. Swartz "Hg_(1-x)Cd_xSe Material Research for IR Applications", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 851208 (1 July 2013); https://doi.org/10.1117/12.953569

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KEYWORDS

Selenium

Mercury

Mercury cadmium telluride

Annealing

Gallium antimonide

Long wavelength infrared

Infrared radiation

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