Antimony-doped silicon blocked impurity band (BIB) arrays for low flux applications

V. Khalap; H. Hogue

doi:10.1117/12.930769

15 October 2012 Antimony-doped silicon blocked impurity band (BIB) arrays for low flux applications

V. Khalap, H. Hogue

Proceedings Volume 8512, Infrared Sensors, Devices, and Applications II; 85120O (2012) https://doi.org/10.1117/12.930769
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

DRS is the inventor and a leading developer of Blocked Impurity Band detector technology for ground, airborne and space-based observing applications and the sole developer of antimony doped silicon (Si:Sb) blocked impurity band (BIB) FPAs. Arsenic doped silicon (Si:As) and Si:Sb arrays in 128² pixel formats were developed by DRS for use on the Spitzer Space telescope. In the subsequent years these arrays were extended in both format and capability. 1024² pixel format, low flux Si:As arrays were developed for the NASA WISE mission, and Si:As and Si:Sb arrays were developed for higher flux applications such as JPL’s MegaMIR camera and Cornell’s FORCAST instrument for SOFIA, in both 256² and 1024² pixel array formats. Si:Sb arrays have advanced to offer similar responsivity, response uniformity, high operability and low dark currents long associated with Si:As BIB arrays but with high quantum efficiency that extends to 40 μm, compared to only 28 μm for Si:As. Recently, Si:Sb detector material has been further developed for low flux astronomy applications. Specifically, Si:Sb material has been grown to satisfy exceptionally low dark current requirements (such as < 0.5 e^-/s/pixel at 5 K) for large format focal plane arrays for future infrared telescopes. This paper will focus on the characterization of this low flux Si:Sb detector material

Citation Download Citation

V. Khalap and H. Hogue "Antimony-doped silicon blocked impurity band (BIB) arrays for low flux applications", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120O (15 October 2012); https://doi.org/10.1117/12.930769

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