Paper
3 May 1988 Theory Of Optical Semiconductor Nonlinearities
H Haug
Author Affiliations +
Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944068
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
The origine of the nonlinear optical properties of semiconductors are discussed. We treat in detail 3 examples for electronic mechanisms: a) induced exciton absorption due to dynamical line-broadening; b) the band-edge nonlinearities due to plasma band-filling, screening, and renormalization; and c) the coherent band-edge nonlinearities for ultra-short pulse excitation.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H Haug "Theory Of Optical Semiconductor Nonlinearities", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); https://doi.org/10.1117/12.944068
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KEYWORDS
Excitons

Absorption

Plasma

Optical semiconductors

Semiconductors

Nonlinear optics

Polarization

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