Nanowires for next generation photovoltaics

Ray R. LaPierre

doi:10.1117/12.2026241

19 September 2013 Nanowires for next generation photovoltaics

Ray R. LaPierre

Proceedings Volume 8820, Nanoepitaxy: Materials and Devices V; 88200A (2013) https://doi.org/10.1117/12.2026241
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

A concept for a nanowire-based photovoltaic (PV) device is presented along with the requirements for achieving high photoconversion efficiency including nanowire morphology, crystalline structure, nanowire dimensions (diameter, period (spacing) and length), avoidance of misfit dislocations, low resistance contacts, controlled doping for p-n junctions, surface passivation, and current-matching. The state of the nanowire PV device field is presented.

Citation Download Citation

Ray R. LaPierre "Nanowires for next generation photovoltaics", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200A (19 September 2013); https://doi.org/10.1117/12.2026241

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