Characterization and properties of multicomponent oxide thin films with gasochromic effect

Jaroslaw Domaradzki; Kosma Baniewicz; Michał Mazur; Damian Wojcieszak; Danuta Kaczmarek

doi:10.1117/12.2030099

25 July 2013 Characterization and properties of multicomponent oxide thin films with gasochromic effect

Jaroslaw Domaradzki, Kosma Baniewicz, Michał Mazur, Damian Wojcieszak, Danuta Kaczmarek

Proceedings Volume 8902, Electron Technology Conference 2013; 890223 (2013) https://doi.org/10.1117/12.2030099
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

In this work structural, optical and surface properties of gasochromic thin films based on mixtures of selected transition metal oxides have been outlined. Two sets of thin films were prepared by reactive magnetron sputtering from four-component metallic mosaic targets containing Ti, V ,Ta as a base and W or Nb as a fourth material. Neither Pd nor Pt metals were used as a catalyst. X-ray diffraction investigations revealed, that all prepared thin films were amorphous while application of x-ray photoelectron spectroscopy studies show presence of TiO₂, V₂O₅, Ta₂O₅, and WO₃ or Nb₂O₅ oxides at the surface depending on the thin films composition. Gasochromic properties were investigated through observations of the change in optical transmission response of the films exposed to reducing or oxidizing gas. Dynamic optical responses of samples were collected at room temperature. Depending on composition of the sample being investigated the change in optical transmission at room temperature ranged up to about 28 %. Based on optical transmission refraction and extinction indexes were calculated using reverse synthesis method. The obtained results are very promising for utilization of prepared thin films in optical gas sensing devices.

Citation Download Citation

Jaroslaw Domaradzki, Kosma Baniewicz, Michał Mazur, Damian Wojcieszak, and Danuta Kaczmarek "Characterization and properties of multicomponent oxide thin films with gasochromic effect", Proc. SPIE 8902, Electron Technology Conference 2013, 890223 (25 July 2013); https://doi.org/10.1117/12.2030099

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