Synthesis of graphene pattern using laser-induced chemical vapor deposition

Jongbok Park; Swook Hann; Yongfeng Lu

doi:10.1117/12.2038059

6 March 2014 Synthesis of graphene pattern using laser-induced chemical vapor deposition

Jongbok Park, Swook Hann, Yongfeng Lu

Proceedings Volume 8968, Laser-based Micro- and Nanoprocessing VIII; 896813 (2014) https://doi.org/10.1117/12.2038059
Event: SPIE LASE, 2014, San Francisco, California, United States

Abstract

In this study, Graphene patterns using laser-induced chemical vapor deposition (LCVD) with a visible CW laser (λ = 532 nm) irradiation at room temperature was investigated. Optically-pumped solid-state laser with a wavelength of 532 nm irradiates a thin nickel foil to induce a local temperature rise, thereby allowing the direct writing of graphene patterns about ~10 μm in width with high growth rate on precisely controlled positions. It is demonstrate that the fabrication of graphene patterns can be achieved with a single scan for each graphene pattern using LCVD with no annealing or preprocessing of the substrate. The scan speed reaches to about ~200 μm/s, which indicates that the graphene pattern with an unite area (10×10 μm) can be grown in 0.05 sec. The number of graphene layers was controlled by laser scan speed on a substrate. The fabricated graphene patterns on nickel foils were directly transferred to desired positions on patterned electrodes. The position-controlled transfer with rapid single-step fabrication of graphene patterns provides an innovative pathway for application of electrical circuits and devices.

Citation Download Citation

Jongbok Park, Swook Hann, and Yongfeng Lu "Synthesis of graphene pattern using laser-induced chemical vapor deposition", Proc. SPIE 8968, Laser-based Micro- and Nanoprocessing VIII, 896813 (6 March 2014); https://doi.org/10.1117/12.2038059

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KEYWORDS

Graphene

Nickel

Chemical vapor deposition

Chemical lasers

Raman spectroscopy

Annealing

Optical lithography

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