Paper
7 March 2014 Optical phonon decay in cubic semiconductors: a hot carrier solar cell picture
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Abstract
In the framework of hot-carrier solar cell absorber material design, we revisit the LO-phonon decay processes in a wide variety of III-V and group IV binary semiconductors. We present a detailed description of the two-phonon final states, from the exact dispersion relation calculated within the Density Functional Perturbation Theory formalism. We focus on the relation between Klemens surfaces features and atomic mass differences, and the importance of the Ridley channels in some group IV binaries.
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Hugo Levard, Sana Laribi, and Jean-François Guillemoles "Optical phonon decay in cubic semiconductors: a hot carrier solar cell picture", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810H (7 March 2014); https://doi.org/10.1117/12.2039564
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KEYWORDS
Phonons

Semiconductors

Solar cells

Group III-V semiconductors

Group IV semiconductors

Solar energy

Gallium arsenide

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