Weak measurements applied to process monitoring using focused beam scatterometry

Thomas G. Brown; Miguel A. Alonso; Anthony Vella; Michael J. Theisen; Stephen T. Head

doi:10.1117/12.2046528

2 April 2014 Weak measurements applied to process monitoring using focused beam scatterometry

Thomas G. Brown, Miguel A. Alonso, Anthony Vella, Michael J. Theisen, Stephen T. Head

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90501F (2014) https://doi.org/10.1117/12.2046528
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The capacity to measure nanoscale features rapidly and accurately is of central importance for the monitoring of manufacturing processes in the production of computer integrated circuits. Parameters of interest include, for example, trench depth, duty cycle, wall angle and oxide layer thickness. The measurement method proposed here uses focused beam scatterometry, in which the illumination consists of a focused field with a suitably tailored spatially-varying polarization distribution. In an analysis that is analogous to classical off-null measurements as well as weak measurements in quantum mechanics, we predict that four or more parameters can be measured and distinguished with an accuracy consistent with the needs laid out in the semiconductor roadmap.

Citation Download Citation

Thomas G. Brown, Miguel A. Alonso, Anthony Vella, Michael J. Theisen, and Stephen T. Head "Weak measurements applied to process monitoring using focused beam scatterometry", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501F (2 April 2014); https://doi.org/10.1117/12.2046528

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