Paper
21 May 2014 A 33-mpixel 120-fps CMOS image sensor using 0.11-μm CIS process
Author Affiliations +
Abstract
We have been researching and developing a CMOS image sensor that has 2.8 μm x 2.8 μm pixel, 33-Mpixel resolution (7680 horizontal pixels x 4320 vertical pixels), 120-fps frame rate, and 12-bit analog-to-digital converter for “8K Super Hi-Vision.” In order to improve its sensitivity, we used a 0.11-μm nanofabricated process and attempted to increase the conversion gain from an electron charge to a voltage in the pixel. The prototyped image sensor shows a sensitivity of 2.4 V/lx•s, which is 1.6 times higher than that of a conventional image sensor. This image sensor also realized the input-referred random noise as low as 2.1 e-rms.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Yasue, Tetsuya Hayashida, Jun Yonai, Kazuya Kitamura, Toshihisa Watabe, Hiroshi Ootake, Hiroshi Shimamoto, Tomohiko Kosugi, Takashi Watanabe, Satoshi Aoyama, and Shoji Kawahito "A 33-mpixel 120-fps CMOS image sensor using 0.11-μm CIS process", Proc. SPIE 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications, 910005 (21 May 2014); https://doi.org/10.1117/12.2049145
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KEYWORDS
Image sensors

Image processing

Sensors

CMOS sensors

Prototyping

Analog electronics

Cadmium sulfide

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