Scanning removal of ion-implanted novolak resist by using a laser irradiation

Tomosumi Kamimura; Yuta Kuroki; Takuya Kiriyama; Hiroki Muraoka; Takashi Nishiyama; Yoshiyuki Harada; Hiroyuki Kuramae; Hideo Horibe

doi:10.1117/12.2073477

22 September 2014 Scanning removal of ion-implanted novolak resist by using a laser irradiation

Tomosumi Kamimura, Yuta Kuroki, Takuya Kiriyama, Hiroki Muraoka, Takashi Nishiyama, Yoshiyuki Harada, Hiroyuki Kuramae, Hideo Horibe

Author Affiliations +

Proceedings Volume 9238, Pacific Rim Laser Damage 2014: Optical Materials for High-Power Lasers; 92380J (2014) https://doi.org/10.1117/12.2073477
Event: Pacific-rim Laser Damage, 2014, Yokohama, Japan

Abstract

Novolak resists which are implanted with B, P, and As ions, respectively, were irradiated with a pulsed 532nm laser. Regardless of the implanted ion species and density, more than 74 % of the laser power was found to absorb into the Si wafer surface. For the laser irradiation of 1 pulse, the ion-implanted resist with a density of 5.0x10¹³ atoms/cm² was completely stripped in the same way as that of a non-implanted resist. The optical absorption of the resist surface increased as the density of the ion-implantation increased. In case of the ion-implanted resist with a density of 5.0x1015 atoms/cm², the resist was stripped by 20 pulses irradiation without occurring laser-induced surface damage. A scanning removal of the highly ion-implanted resist was also successfully stripped by using an optimized irradiation condition. A highly ion-implanted resist was continuously stripped by the scanning laser irradiation with 20 pulses.

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Tomosumi Kamimura, Yuta Kuroki, Takuya Kiriyama, Hiroki Muraoka, Takashi Nishiyama, Yoshiyuki Harada, Hiroyuki Kuramae, and Hideo Horibe "Scanning removal of ion-implanted novolak resist by using a laser irradiation", Proc. SPIE 9238, Pacific Rim Laser Damage 2014: Optical Materials for High-Power Lasers, 92380J (22 September 2014); https://doi.org/10.1117/12.2073477

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