Depth profile analysis of native oxide layer on GaAs (100) surface

Xing Cheng; Feng Shi; Hongchang Cheng; Sen Niu; Long Wang; Zhuang Miao; Chang Chen

doi:10.1117/12.2070798

18 December 2014 Depth profile analysis of native oxide layer on GaAs (100) surface

Xing Cheng, Feng Shi, Hongchang Cheng, Sen Niu, Long Wang, Zhuang Miao, Chang Chen

Proceedings Volume 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies; 929503 (2014) https://doi.org/10.1117/12.2070798
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

Ar⁺ ion etching and X-ray photoelectron spectroscopy (XPS)depth profile analysis have been performed on the native oxide layerof GaAs(100) surface. The composition of the native oxide layer,that isthe oxide phases of gallium and arsenic, was characterized precisely. It is indicated that native oxide phases on extreme surface of GaAs(100) consist of a mixture of Ga₂O₃, As₂O₃ and As₂O₅. Furthermore, the respective distribution of oxide phases of gallium and arsenic along the depthwere compared and analyzed.A seemingly contradictory phenomenon was found, that is As enrichment exist in total oxide layer, but the content of Ga oxide was greater than that of As oxide in the oxide layer except for the outmost surface layer.Based on the comprehensive influence of oxidation process, etching, segregation and growth process, the intrinsic mechanism of the change of oxides along etching depth was discussed. According to the analyzed results, the oxide layer of GaAs (100) surface should be divided to two layers,that is the outmost layer containing oxides of Ga and As and the intermediate layer including only oxide of Ga.The concentration of As oxides in the outmost layer and the enrichment of As in total oxide layer are derived from surface structure inhomogeneity. The throughout total oxide layer of Ga oxide is attributed to its stronger oxidability.In the present work, the system study for native oxide layer of GaAs surface provides the powerful foundation for understanding surface state of GaAs and surface treatment.

Citation Download Citation

Xing Cheng, Feng Shi, Hongchang Cheng, Sen Niu, Long Wang, Zhuang Miao, and Chang Chen "Depth profile analysis of native oxide layer on GaAs (100) surface", Proc. SPIE 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies, 929503 (18 December 2014); https://doi.org/10.1117/12.2070798

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available