Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector

Dong Fu; Jietao Liu; Binzong Xu; Yun Xu; Guofeng Song; Xin Wei

doi:10.1117/12.2072158

20 November 2014 Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector

Dong Fu, Jietao Liu, Binzong Xu, Yun Xu, Guofeng Song, Xin Wei

Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001H (2014) https://doi.org/10.1117/12.2072158
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

The trade-off between the enhanced signal-to-noise ratio and reduced light absorption in thin-film photodetectors is the main issue for improving device performance. Nanoscale patterning of metal/dielectric interface can couple incident light into surface plasmon polaritons (SPPs) modes, leading to the enhanced absorption. However, due to the nature of resonant excitation of SPPs, it is difficult to realize broadband absorption enhancement. In this study, we propose a novel device structure to achieve absorption enhancement over the whole spectral response range of the thin-film In0.53Ga0.47As photodetector. Numerical simulation shows that both the preferential forward scattering of InP cylinder and grating coupled waveguide modes contribute to the broadband absorption enhancement.

Citation Download Citation

Dong Fu, Jietao Liu, Binzong Xu, Yun Xu, Guofeng Song, and Xin Wei "Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001H (20 November 2014); https://doi.org/10.1117/12.2072158

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KEYWORDS

Absorption

Photodetectors

Waveguide modes

Thin films

Scattering

Mie scattering

Light scattering

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