Paper
18 August 1988 Effects Of Electronic Coupling On The Band Alignment Of GaAs-AlAs Quantum Well Structures
K. J. Moore, P. Dawson, C. T. Foxon
Author Affiliations +
Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947307
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We report the results of a systematic investigation of the effects of decreasing the AlAs layer thickness from 41Å to 5Å on the band alignment of GaAs-AlAs quantum wells in which the GaAs thickness was kept constant at nominally 25Å. Combining the techniques of photoluminescence and photoluminescence excitation spectroscopy we have mapped out both the direct r-related bandgap and the x-r bandgap as a function of AlAs thickness. We observe a reversal of the band alignment from the type II to the type I arrangement when the AlAs thickness is reduced below ~13Å In addition, we present further evidence which confirms that the type II emission process is related to the Xz-r pseudo-direct bandgap. In the structures with very thin (<10Å) AlAs layers we note a significant modification of the type I excitation spectra where the n=1 exciton peak can be hundreds of times stronger than the apparent absorption in the continuum region.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. J. Moore, P. Dawson, and C. T. Foxon "Effects Of Electronic Coupling On The Band Alignment Of GaAs-AlAs Quantum Well Structures", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947307
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KEYWORDS
Gallium arsenide

Excitons

Electrons

Quantum wells

Superlattices

Absorption

Luminescence

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