Activation processes on GaAs photocathode by different currents of oxygen source

Zhuang Miao; Feng Shi; Hongchang Cheng; Shufei Wang; Xiaohui Zhang; Yuan Yuan; Chang Chen

doi:10.1117/12.2178708

13 April 2015 Activation processes on GaAs photocathode by different currents of oxygen source

Zhuang Miao, Feng Shi, Hongchang Cheng, Shufei Wang, Xiaohui Zhang, Yuan Yuan, Chang Chen

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95220H (2015) https://doi.org/10.1117/12.2178708
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

In order to know the influence of activation processes on GaAs photocathodes, three GaAs samples were activated by a fixed current of cesium source and different currents of oxygen source. The current of caesium source is same during activation to ensure initial adsorption of caesium quantum is similar, which is the base to show the difference during alternation activation of caesium and oxygen. Analysed with the activation data, it is indicated that Cs-to-O current ratio of 1.07 is the optimum ratio to obtain higher sensitivity and better stability. According to double dipole model, stable and uniform double dipole layers of GaAs-O-Cs:Cs-O-Cs are formed and negative electron affinity is achieved on GaAs surface by activation with cesium and oxygen. The analytical result is just coincident with the model. Thus there is an efficient technological method to improve sensitivity and stability of GaAs photocathode.

Citation Download Citation

Zhuang Miao, Feng Shi, Hongchang Cheng, Shufei Wang, Xiaohui Zhang, Yuan Yuan, and Chang Chen "Activation processes on GaAs photocathode by different currents of oxygen source", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220H (13 April 2015); https://doi.org/10.1117/12.2178708

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