Nondegenerate two- and three-photon nonlinearities in semiconductors

Matthew Reichert; Peng Zhao; Himansu S. Pattanaik; David J. Hagan; Eric W. Van Stryland

doi:10.1117/12.2223286

13 May 2016 Nondegenerate two- and three-photon nonlinearities in semiconductors

Matthew Reichert, Peng Zhao, Himansu S. Pattanaik, David J. Hagan, Eric W. Van Stryland

Author Affiliations +

Proceedings Volume 9835, Ultrafast Bandgap Photonics; 98350A (2016) https://doi.org/10.1117/12.2223286
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

Two-photon absorption, 2PA, in semiconductors is enhanced by two orders of magnitude due to intermediate-state resonance enhancement, ISRE, for very nondegenerate (ND) photon energies. Associated with this enhancement in loss is enhancement of the nonlinear refractive index, n2. Even larger enhancement of three-photon absorption is calculated and observed. These large nonlinearities have implications for applications including ND two-photon gain and twophoton semiconductor lasers. Calculations for enhancement of ND-2PA in quantum wells is also presented showing another order of magnitude increase in 2PA. Potential devices include room temperature gated infrared detectors for LIDAR and all-optical switches.

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Matthew Reichert, Peng Zhao, Himansu S. Pattanaik, David J. Hagan, and Eric W. Van Stryland "Nondegenerate two- and three-photon nonlinearities in semiconductors", Proc. SPIE 9835, Ultrafast Bandgap Photonics, 98350A (13 May 2016); https://doi.org/10.1117/12.2223286

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KEYWORDS

Quantum wells

Absorption

Semiconductors

Resonance enhancement

Gallium arsenide

Dispersion

Semiconductor lasers

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