Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient

Ahmet Kaya; Jianyi Gao; Hilal Cansızoglu; Ahmed S. Mayet; Hasina H. Mamtaz; Soroush GhandiParsi; Srabanti Chowdhury; M. Saif Islam

doi:10.1117/12.2239177

19 September 2016 Ga₂O₃ as both gate dielectric and surface passivation via sol-gel method at room ambient

Ahmet Kaya, Jianyi Gao, Hilal Cansızoglu, Ahmed S. Mayet, Hasina H. Mamtaz, Soroush GhandiParsi, Srabanti Chowdhury, M. Saif Islam

Author Affiliations +

Proceedings Volume 9957, Wide Bandgap Power Devices and Applications; 995709 (2016) https://doi.org/10.1117/12.2239177
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States

Abstract

We report the use of sol-gel method at room ambient to grow nanoscale thin film of Ga₂O₃ on Si surface for both surface passivation and gate dielectric. The admittance measurements were carried out in the frequency range of 20 kHz-1 MHz at room temperature. Voltage dependent profile of interfacial trap density (D_it) was obtained by using low and high frequency capacitance method. The capacitance (C)-voltage (V) analyses show that the structures have a low interfacial trap density (D_it) of 1x10¹² cm^-2eV^-1. The Ga₂O₃ thin film synthesized via sol-gel method directly on devices to function as a gate dielectric film is found to be very effective. We also present our experimental results for a number of gate dielectric and device passivation applications.

Conference Presentation

Citation Download Citation

Ahmet Kaya, Jianyi Gao, Hilal Cansızoglu, Ahmed S. Mayet, Hasina H. Mamtaz, Soroush GhandiParsi, Srabanti Chowdhury, and M. Saif Islam "Ga₂O₃ as both gate dielectric and surface passivation via sol-gel method at room ambient", Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995709 (19 September 2016); https://doi.org/10.1117/12.2239177

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