Presentation + Paper
25 October 2016 Advances in AlGaInN laser diode technology for defence, security and sensing applications
S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisnieski, R. Czernecki, G. Targowski
Author Affiliations +
Proceedings Volume 9992, Emerging Imaging and Sensing Technologies; 99920C (2016) https://doi.org/10.1117/12.2240555
Event: SPIE Security + Defence, 2016, Edinburgh, United Kingdom
Abstract
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisnieski, R. Czernecki, and G. Targowski "Advances in AlGaInN laser diode technology for defence, security and sensing applications", Proc. SPIE 9992, Emerging Imaging and Sensing Technologies, 99920C (25 October 2016); https://doi.org/10.1117/12.2240555
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KEYWORDS
Gallium nitride

Gallium nitride

Semiconductor lasers

Laser applications

Security technologies

Defense and security

Quantum wells

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