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Laser diodes fabricated from the AlGaInN material system is an emerging technology for
defence, security and sensing applications. The AlGaInN material system allows for laser diodes
to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible
~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and
novel applications including displays and imaging systems, free-space and underwater
telecommunications and the latest quantum technologies such as optical atomic clocks and atom
interferometry.
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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisnieski, R. Czernecki, G. Targowski, "Advances in AlGaInN laser diode technology for defence, security and sensing applications," Proc. SPIE 9992, Emerging Imaging and Sensing Technologies, 99920C (25 October 2016); https://doi.org/10.1117/12.2240555